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1 © CMOS Digital Integrated Circuits – 3rd Edition
CMOS Digital Integrated Circuits
Chapter 1
Introduction
S.M. Kang and Y. Leblebici
Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.
2 © CMOS Digital Integrated Circuits – 3rd Edition
Some History
Invention of the transistor (BJT) 1947
Shockley, Bardeen, Brattain – Bell Labs
Single-transistor integrated circuit 1958
Jack Kilby – Texas Instruments
Invention of CMOS logic gates 1963
Wanlass & Sah – Fairchild Semiconductor
First microprocessor (Intel 4004) 1970
2,300 MOS transistors, 740 kHz clock frequency
Very Large Scale Integration 1978
Chips with more than ~20,000 devices
3 © CMOS Digital Integrated Circuits – 3rd Edition
More Recently
Ultra Large Scale Integration
System on Chip (SoC)
20 ~ 30 million transistors in 2002
The chip complexity has increased by a factor of 1000
since its first introduction, but the term VLSI remained
virtually universal to denote digital integrated systems
with high complexity.
4 © CMOS Digital Integrated Circuits – 3rd Edition
As a result of the continuously increasing integration
density and decreasing unit costs, the semiconductor
industry has been one of the fastest growing sectors
in the worldwide economy.
Economic Impact
5 © CMOS Digital Integrated Circuits – 3rd Edition
Large
Centralized
Expensive
Industry Trends
Small / Portable
Distributed
Inexpensive
6 © CMOS Digital Integrated Circuits – 3rd Edition
More portable, wearable, and more powerful devices
for ubiquitous and pervasive computing…
Industry Trends
High performance
Low power dissipation
Wireless capability
etc…
7 © CMOS Digital Integrated Circuits – 3rd Edition
Some Leading-Edge Examples
8 © CMOS Digital Integrated Circuits – 3rd Edition
Some Leading-Edge Examples
IBM S/390 Microprocessor
0.13 µm CMOS process
7 layers Cu interconnect
47 million transistors
1 GHz clock
180 mm2
9 © CMOS Digital Integrated Circuits – 3rd Edition
Evolution of Minimum Feature Size
10 © CMOS Digital Integrated Circuits – 3rd Edition
Evolution of Minimum Feature Size
2002: 130 nm
2003: 90 nm
…
2010: 35 nm (?)
11 © CMOS Digital Integrated Circuits – 3rd Edition
Moore’s Law
12 © CMOS Digital Integrated Circuits – 3rd Edition
Evolution of Memory Capacity
13 © CMOS Digital Integrated Circuits – 3rd Edition
YEAR 2002 2005 2008 2011 2014
TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm
CHIP SIZE 400 mm
2
600 mm
2
750 mm
2
800 mm
2
900 mm
2
NUMBER OF
TRANSISTORS
(LOGIC)
400 M 1 Billion 3 Billion 6 Billion 16 Billion
DRAM
CAPACITY
2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits
MAXIMUM
CLOCK
FREQUENCY
1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz
MINIMUM
SUPPLY
VOLTAGE
1.5 V 1.2 V 0.9 V 0.6 V 0.6 V
MAXIMUM
POWER
DISSIPATION
130 W 160 W 170 W 175 W 180 W
MAXIMUM
NUMBER OF
I/O PINS
2500 4000 4500 5500 6000
ITRS - International Technology Roadmap for
Semiconductors
Predictions of the worldwide semiconductor / IC
industry about its own future prospects...
14 © CMOS Digital Integrated Circuits – 3rd Edition
YEAR 2002 2005 2008 2011 2014
TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm
CHIP SIZE 400 mm
2
600 mm
2
750 mm
2
800 mm
2
900 mm
2
NUMBER OF
TRANSISTORS
(LOGIC)
400 M 1 Billion 3 Billion 6 Billion 16 Billion
DRAM
CAPACITY
2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits
MAXIMUM
CLOCK
FREQUENCY
1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz
MINIMUM
SUPPLY
VOLTAGE
1.5 V 1.2 V 0.9 V 0.6 V 0.6 V
MAXIMUM
POWER
DISSIPATION
130 W 160 W 170 W 175 W 180 W
MAXIMUM
NUMBER OF
I/O PINS
2500 4000 4500 5500 6000
Shrinking Device Dimensions
15 © CMOS Digital Integrated Circuits – 3rd Edition
YEAR 2002 2005 2008 2011 2014
TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm
CHIP SIZE 400 mm
2
600 mm
2
750 mm
2
800 mm
2
900 mm
2
NUMBER OF
TRANSISTORS
(LOGIC)
400 M 1 Billion 3 Billion 6 Billion 16 Billion
DRAM
CAPACITY 2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits
MAXIMUM
CLOCK
FREQUENCY
1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz
MINIMUM
SUPPLY
VOLTAGE
1.5 V 1.2 V 0.9 V 0.6 V 0.6 V
MAXIMUM
POWER
DISSIPATION
130 W 160 W 170 W 175 W 180 W
MAXIMUM
NUMBER OF
I/O PINS
2500 4000 4500 5500 6000
Increasing Function Density
16 © CMOS Digital Integrated Circuits – 3rd Edition
YEAR 2002 2005 2008 2011 2014
TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm
CHIP SIZE 400 mm
2
600 mm
2
750 mm
2
800 mm
2
900 mm
2
NUMBER OF
TRANSISTORS
(LOGIC)
400 M 1 Billion 3 Billion 6 Billion 16 Billion
DRAM
CAPACITY
2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits
MAXIMUM
CLOCK
FREQUENCY
1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz
MINIMUM
SUPPLY
VOLTAGE
1.5 V 1.2 V 0.9 V 0.6 V 0.6 V
MAXIMUM
POWER
DISSIPATION
130 W 160 W 170 W 175 W 180 W
MAXIMUM
NUMBER OF
I/O PINS
2500 4000 4500 5500 6000
Increasing Clock Frequency
17 © CMOS Digital Integrated Circuits – 3rd Edition
YEAR 2002 2005 2008 2011 2014
TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm
CHIP SIZE 400 mm
2
600 mm
2
750 mm
2
800 mm
2
900 mm
2
NUMBER OF
TRANSISTORS
(LOGIC)
400 M 1 Billion 3 Billion 6 Billion 16 Billion
DRAM
CAPACITY
2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits
MAXIMUM
CLOCK
FREQUENCY
1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz
MINIMUM
SUPPLY
VOLTAGE
1.5 V 1.2 V 0.9 V 0.6 V 0.6 V
MAXIMUM
POWER
DISSIPATION
130 W 160 W 170 W 175 W 180 W
MAXIMUM
NUMBER OF
I/O PINS
2500 4000 4500 5500 6000
Decreasing Supply Voltage
18 © CMOS Digital Integrated Circuits – 3rd Edition
19 © CMOS Digital Integrated Circuits – 3rd Edition
20 © CMOS Digital Integrated Circuits – 3rd Edition
5-layer cross-section of chip
21 © CMOS Digital Integrated Circuits – 3rd Edition
22 © CMOS Digital Integrated Circuits – 3rd Edition
System-on-Chip
Integrating all or most of the components of a hybrid
system on a single substrate (silicon or MCM), rather
than building a conventional printed circuit board.
1. More compact system realization
2. Higher speed / performance
• Better reliability
• Less expensive !
23 © CMOS Digital Integrated Circuits – 3rd Edition
24 © CMOS Digital Integrated Circuits – 3rd Edition
New Direction: System-on-Chip (SoC)
ASIC Core
Memory
Embedded
Processor
Core
Analog
Functions
Communication
Sensor
Interface
25 © CMOS Digital Integrated Circuits – 3rd Edition
26 © CMOS Digital Integrated Circuits – 3rd Edition
Products have a shorter life-cycle !
27 © CMOS Digital Integrated Circuits – 3rd Edition
28 © CMOS Digital Integrated Circuits – 3rd Edition
Better strategy
29 © CMOS Digital Integrated Circuits – 3rd Edition
The Y-Chart
Notice: There is a
need for structured
design methodologies
to handle the high
level of complexity !
30 © CMOS Digital Integrated Circuits – 3rd Edition
Simplified VLSI
Design Flow
Top-down
Bottom-up
31 © CMOS Digital Integrated Circuits – 3rd Edition
Structured Design Principles
Hierarchy: “Divide and conquer” technique involves dividing a module into sub-
modules and then repeating this operation on the sub-modules until the
complexity of the smaller parts becomes manageable.
Regularity: The hierarchical decomposition of a large system should result in not only
simple, but also similar blocks, as much as possible. Regularity usually
reduces the number of different modules that need to be designed and
verified, at all levels of abstraction.
Modularity: The various functional blocks which make up the larger system must have
well-defined functions and interfaces.
Locality: Internal details remain at the local level. The concept of locality also
ensures that connections are mostly between neighboring modules,
avoiding long-distance connections as much as possible.
32 © CMOS Digital Integrated Circuits – 3rd Edition
Hierarchy of a 4-bit Carry Ripple Adder
33 © CMOS Digital Integrated Circuits – 3rd Edition
Hierarchy of a 16-bit Manchester Adder
34 © CMOS Digital Integrated Circuits – 3rd Edition
Hierarchy of a 16-bit Manchester Adder
35 © CMOS Digital Integrated Circuits – 3rd Edition
Hierarchy of a 16-bit Manchester Adder
36 © CMOS Digital Integrated Circuits – 3rd Edition
Hierarchy of a 16-bit Manchester Adder
37 © CMOS Digital Integrated Circuits – 3rd Edition
Regularity
2-input MUX
DFF
38 © CMOS Digital Integrated Circuits – 3rd Edition
VLSI Design Styles
FPGA
39 © CMOS Digital Integrated Circuits – 3rd Edition
Full Custom Design
Following the partitioning, the
transistor level design of the
building block is generated
and simulated.
The example shows a 1-bit
full-adder schematic and its
SPICE simulation results.
40 © CMOS Digital Integrated Circuits – 3rd Edition
Full Custom Design
The main objective of full custom design is to ensure fine-grained
regularity and modularity.
41 © CMOS Digital Integrated Circuits – 3rd Edition
Full Custom Design
A carefully crafted
full custom block
can be placed both
along the X and Y
axis to form an
interconnected
two-dimensional
array.
Example:
Data-path cells
42 © CMOS Digital Integrated Circuits – 3rd Edition
Full Custom SRAM Cell Design
43 © CMOS Digital Integrated Circuits – 3rd Edition
Mapping the Design into Layout
Manual full-custom
design can be very
challenging and
time consuming,
especially if the
low level regularity
is not well defined !
44 © CMOS Digital Integrated Circuits – 3rd Edition
VLSI Design Styles
FPGA
45 © CMOS Digital Integrated Circuits – 3rd Edition
HDL-Based Design
1980’s
Hardware Description Languages (HDL) were conceived to
facilitate the information exchange between design
groups.
1990’s
The increasing computation power led to the introduction
of logic synthesizers that can translate the description in
HDL into a synthesized gate-level net-list of the design.
2000’s
Modern synthesis algorithms can optimize a digital design
and explore different alternatives to identify the design
that best meets the requirements.
46 © CMOS Digital Integrated Circuits – 3rd Edition
HDL-Based Design
The design is
synthesized and
mapped into the
target technology.
The logic gates
have one-to-one
equivalents as
standard cells
in the target
technology.
47 © CMOS Digital Integrated Circuits – 3rd Edition
Standard Cells
AND DFF INV XOR
48 © CMOS Digital Integrated Circuits – 3rd Edition
Standard Cells
49 © CMOS Digital Integrated Circuits – 3rd Edition
Standard Cells
50 © CMOS Digital Integrated Circuits – 3rd Edition
Standard Cells
Rows of standard
cells with routing
channels between
them
Memory array
51 © CMOS Digital Integrated Circuits – 3rd Edition
Standard Cells
52 © CMOS Digital Integrated Circuits – 3rd Edition
VLSI Design Styles
FPGA
53 © CMOS Digital Integrated Circuits – 3rd Edition
Mask Gate Array
54 © CMOS Digital Integrated Circuits – 3rd Edition
Mask Gate Array
Before customization
55 © CMOS Digital Integrated Circuits – 3rd Edition
VLSI Design Styles
FPGA
56 © CMOS Digital Integrated Circuits – 3rd Edition
Field Programmable Gate Array
57 © CMOS Digital Integrated Circuits – 3rd Edition
Field Programmable Gate Array
Internal structure of a CLB
58 © CMOS Digital Integrated Circuits – 3rd Edition
Field Programmable Gate Array

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CMOS Digital Integrated Circuits - Ch 01_Introduction

  • 1. 1 © CMOS Digital Integrated Circuits – 3rd Edition CMOS Digital Integrated Circuits Chapter 1 Introduction S.M. Kang and Y. Leblebici Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.
  • 2. 2 © CMOS Digital Integrated Circuits – 3rd Edition Some History Invention of the transistor (BJT) 1947 Shockley, Bardeen, Brattain – Bell Labs Single-transistor integrated circuit 1958 Jack Kilby – Texas Instruments Invention of CMOS logic gates 1963 Wanlass & Sah – Fairchild Semiconductor First microprocessor (Intel 4004) 1970 2,300 MOS transistors, 740 kHz clock frequency Very Large Scale Integration 1978 Chips with more than ~20,000 devices
  • 3. 3 © CMOS Digital Integrated Circuits – 3rd Edition More Recently Ultra Large Scale Integration System on Chip (SoC) 20 ~ 30 million transistors in 2002 The chip complexity has increased by a factor of 1000 since its first introduction, but the term VLSI remained virtually universal to denote digital integrated systems with high complexity.
  • 4. 4 © CMOS Digital Integrated Circuits – 3rd Edition As a result of the continuously increasing integration density and decreasing unit costs, the semiconductor industry has been one of the fastest growing sectors in the worldwide economy. Economic Impact
  • 5. 5 © CMOS Digital Integrated Circuits – 3rd Edition Large Centralized Expensive Industry Trends Small / Portable Distributed Inexpensive
  • 6. 6 © CMOS Digital Integrated Circuits – 3rd Edition More portable, wearable, and more powerful devices for ubiquitous and pervasive computing… Industry Trends High performance Low power dissipation Wireless capability etc…
  • 7. 7 © CMOS Digital Integrated Circuits – 3rd Edition Some Leading-Edge Examples
  • 8. 8 © CMOS Digital Integrated Circuits – 3rd Edition Some Leading-Edge Examples IBM S/390 Microprocessor 0.13 µm CMOS process 7 layers Cu interconnect 47 million transistors 1 GHz clock 180 mm2
  • 9. 9 © CMOS Digital Integrated Circuits – 3rd Edition Evolution of Minimum Feature Size
  • 10. 10 © CMOS Digital Integrated Circuits – 3rd Edition Evolution of Minimum Feature Size 2002: 130 nm 2003: 90 nm … 2010: 35 nm (?)
  • 11. 11 © CMOS Digital Integrated Circuits – 3rd Edition Moore’s Law
  • 12. 12 © CMOS Digital Integrated Circuits – 3rd Edition Evolution of Memory Capacity
  • 13. 13 © CMOS Digital Integrated Circuits – 3rd Edition YEAR 2002 2005 2008 2011 2014 TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm CHIP SIZE 400 mm 2 600 mm 2 750 mm 2 800 mm 2 900 mm 2 NUMBER OF TRANSISTORS (LOGIC) 400 M 1 Billion 3 Billion 6 Billion 16 Billion DRAM CAPACITY 2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits MAXIMUM CLOCK FREQUENCY 1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz MINIMUM SUPPLY VOLTAGE 1.5 V 1.2 V 0.9 V 0.6 V 0.6 V MAXIMUM POWER DISSIPATION 130 W 160 W 170 W 175 W 180 W MAXIMUM NUMBER OF I/O PINS 2500 4000 4500 5500 6000 ITRS - International Technology Roadmap for Semiconductors Predictions of the worldwide semiconductor / IC industry about its own future prospects...
  • 14. 14 © CMOS Digital Integrated Circuits – 3rd Edition YEAR 2002 2005 2008 2011 2014 TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm CHIP SIZE 400 mm 2 600 mm 2 750 mm 2 800 mm 2 900 mm 2 NUMBER OF TRANSISTORS (LOGIC) 400 M 1 Billion 3 Billion 6 Billion 16 Billion DRAM CAPACITY 2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits MAXIMUM CLOCK FREQUENCY 1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz MINIMUM SUPPLY VOLTAGE 1.5 V 1.2 V 0.9 V 0.6 V 0.6 V MAXIMUM POWER DISSIPATION 130 W 160 W 170 W 175 W 180 W MAXIMUM NUMBER OF I/O PINS 2500 4000 4500 5500 6000 Shrinking Device Dimensions
  • 15. 15 © CMOS Digital Integrated Circuits – 3rd Edition YEAR 2002 2005 2008 2011 2014 TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm CHIP SIZE 400 mm 2 600 mm 2 750 mm 2 800 mm 2 900 mm 2 NUMBER OF TRANSISTORS (LOGIC) 400 M 1 Billion 3 Billion 6 Billion 16 Billion DRAM CAPACITY 2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits MAXIMUM CLOCK FREQUENCY 1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz MINIMUM SUPPLY VOLTAGE 1.5 V 1.2 V 0.9 V 0.6 V 0.6 V MAXIMUM POWER DISSIPATION 130 W 160 W 170 W 175 W 180 W MAXIMUM NUMBER OF I/O PINS 2500 4000 4500 5500 6000 Increasing Function Density
  • 16. 16 © CMOS Digital Integrated Circuits – 3rd Edition YEAR 2002 2005 2008 2011 2014 TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm CHIP SIZE 400 mm 2 600 mm 2 750 mm 2 800 mm 2 900 mm 2 NUMBER OF TRANSISTORS (LOGIC) 400 M 1 Billion 3 Billion 6 Billion 16 Billion DRAM CAPACITY 2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits MAXIMUM CLOCK FREQUENCY 1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz MINIMUM SUPPLY VOLTAGE 1.5 V 1.2 V 0.9 V 0.6 V 0.6 V MAXIMUM POWER DISSIPATION 130 W 160 W 170 W 175 W 180 W MAXIMUM NUMBER OF I/O PINS 2500 4000 4500 5500 6000 Increasing Clock Frequency
  • 17. 17 © CMOS Digital Integrated Circuits – 3rd Edition YEAR 2002 2005 2008 2011 2014 TECHNOLOGY 130 nm 100 nm 70 nm 50 nm 35 nm CHIP SIZE 400 mm 2 600 mm 2 750 mm 2 800 mm 2 900 mm 2 NUMBER OF TRANSISTORS (LOGIC) 400 M 1 Billion 3 Billion 6 Billion 16 Billion DRAM CAPACITY 2 Gbits 10 Gbits 25 Gbits 70 Gbits 200 Gbits MAXIMUM CLOCK FREQUENCY 1.6 GHz 2.0 GHz 2.5 GHz 3.0 GHz 3.5 GHz MINIMUM SUPPLY VOLTAGE 1.5 V 1.2 V 0.9 V 0.6 V 0.6 V MAXIMUM POWER DISSIPATION 130 W 160 W 170 W 175 W 180 W MAXIMUM NUMBER OF I/O PINS 2500 4000 4500 5500 6000 Decreasing Supply Voltage
  • 18. 18 © CMOS Digital Integrated Circuits – 3rd Edition
  • 19. 19 © CMOS Digital Integrated Circuits – 3rd Edition
  • 20. 20 © CMOS Digital Integrated Circuits – 3rd Edition 5-layer cross-section of chip
  • 21. 21 © CMOS Digital Integrated Circuits – 3rd Edition
  • 22. 22 © CMOS Digital Integrated Circuits – 3rd Edition System-on-Chip Integrating all or most of the components of a hybrid system on a single substrate (silicon or MCM), rather than building a conventional printed circuit board. 1. More compact system realization 2. Higher speed / performance • Better reliability • Less expensive !
  • 23. 23 © CMOS Digital Integrated Circuits – 3rd Edition
  • 24. 24 © CMOS Digital Integrated Circuits – 3rd Edition New Direction: System-on-Chip (SoC) ASIC Core Memory Embedded Processor Core Analog Functions Communication Sensor Interface
  • 25. 25 © CMOS Digital Integrated Circuits – 3rd Edition
  • 26. 26 © CMOS Digital Integrated Circuits – 3rd Edition Products have a shorter life-cycle !
  • 27. 27 © CMOS Digital Integrated Circuits – 3rd Edition
  • 28. 28 © CMOS Digital Integrated Circuits – 3rd Edition Better strategy
  • 29. 29 © CMOS Digital Integrated Circuits – 3rd Edition The Y-Chart Notice: There is a need for structured design methodologies to handle the high level of complexity !
  • 30. 30 © CMOS Digital Integrated Circuits – 3rd Edition Simplified VLSI Design Flow Top-down Bottom-up
  • 31. 31 © CMOS Digital Integrated Circuits – 3rd Edition Structured Design Principles Hierarchy: “Divide and conquer” technique involves dividing a module into sub- modules and then repeating this operation on the sub-modules until the complexity of the smaller parts becomes manageable. Regularity: The hierarchical decomposition of a large system should result in not only simple, but also similar blocks, as much as possible. Regularity usually reduces the number of different modules that need to be designed and verified, at all levels of abstraction. Modularity: The various functional blocks which make up the larger system must have well-defined functions and interfaces. Locality: Internal details remain at the local level. The concept of locality also ensures that connections are mostly between neighboring modules, avoiding long-distance connections as much as possible.
  • 32. 32 © CMOS Digital Integrated Circuits – 3rd Edition Hierarchy of a 4-bit Carry Ripple Adder
  • 33. 33 © CMOS Digital Integrated Circuits – 3rd Edition Hierarchy of a 16-bit Manchester Adder
  • 34. 34 © CMOS Digital Integrated Circuits – 3rd Edition Hierarchy of a 16-bit Manchester Adder
  • 35. 35 © CMOS Digital Integrated Circuits – 3rd Edition Hierarchy of a 16-bit Manchester Adder
  • 36. 36 © CMOS Digital Integrated Circuits – 3rd Edition Hierarchy of a 16-bit Manchester Adder
  • 37. 37 © CMOS Digital Integrated Circuits – 3rd Edition Regularity 2-input MUX DFF
  • 38. 38 © CMOS Digital Integrated Circuits – 3rd Edition VLSI Design Styles FPGA
  • 39. 39 © CMOS Digital Integrated Circuits – 3rd Edition Full Custom Design Following the partitioning, the transistor level design of the building block is generated and simulated. The example shows a 1-bit full-adder schematic and its SPICE simulation results.
  • 40. 40 © CMOS Digital Integrated Circuits – 3rd Edition Full Custom Design The main objective of full custom design is to ensure fine-grained regularity and modularity.
  • 41. 41 © CMOS Digital Integrated Circuits – 3rd Edition Full Custom Design A carefully crafted full custom block can be placed both along the X and Y axis to form an interconnected two-dimensional array. Example: Data-path cells
  • 42. 42 © CMOS Digital Integrated Circuits – 3rd Edition Full Custom SRAM Cell Design
  • 43. 43 © CMOS Digital Integrated Circuits – 3rd Edition Mapping the Design into Layout Manual full-custom design can be very challenging and time consuming, especially if the low level regularity is not well defined !
  • 44. 44 © CMOS Digital Integrated Circuits – 3rd Edition VLSI Design Styles FPGA
  • 45. 45 © CMOS Digital Integrated Circuits – 3rd Edition HDL-Based Design 1980’s Hardware Description Languages (HDL) were conceived to facilitate the information exchange between design groups. 1990’s The increasing computation power led to the introduction of logic synthesizers that can translate the description in HDL into a synthesized gate-level net-list of the design. 2000’s Modern synthesis algorithms can optimize a digital design and explore different alternatives to identify the design that best meets the requirements.
  • 46. 46 © CMOS Digital Integrated Circuits – 3rd Edition HDL-Based Design The design is synthesized and mapped into the target technology. The logic gates have one-to-one equivalents as standard cells in the target technology.
  • 47. 47 © CMOS Digital Integrated Circuits – 3rd Edition Standard Cells AND DFF INV XOR
  • 48. 48 © CMOS Digital Integrated Circuits – 3rd Edition Standard Cells
  • 49. 49 © CMOS Digital Integrated Circuits – 3rd Edition Standard Cells
  • 50. 50 © CMOS Digital Integrated Circuits – 3rd Edition Standard Cells Rows of standard cells with routing channels between them Memory array
  • 51. 51 © CMOS Digital Integrated Circuits – 3rd Edition Standard Cells
  • 52. 52 © CMOS Digital Integrated Circuits – 3rd Edition VLSI Design Styles FPGA
  • 53. 53 © CMOS Digital Integrated Circuits – 3rd Edition Mask Gate Array
  • 54. 54 © CMOS Digital Integrated Circuits – 3rd Edition Mask Gate Array Before customization
  • 55. 55 © CMOS Digital Integrated Circuits – 3rd Edition VLSI Design Styles FPGA
  • 56. 56 © CMOS Digital Integrated Circuits – 3rd Edition Field Programmable Gate Array
  • 57. 57 © CMOS Digital Integrated Circuits – 3rd Edition Field Programmable Gate Array Internal structure of a CLB
  • 58. 58 © CMOS Digital Integrated Circuits – 3rd Edition Field Programmable Gate Array